Influence of SrTiO/sub 3/ or Pt buffer layer on the formation of perovskite phase Pb/sub 1-x/La/sub x/(Zr/sub y/Ti/sub 1-y/)/sub 1-x/4/O/sub 3/ films prepared by pulsed laser deposition

摘要

Interdiffusion between layers in Pb/sub 1/-xLa/sub x/(Zr/sub 1/-yTi/sub y/)O/sub 3/(PLZT)/SrTiO/sub 3//Si thin films were studied. The structural profiles examined by grazing incident X-ray diffraction (GIXD) and the elemental profiles examined by secondary ions mass spectroscopy (SIMS) revealed that the SrTiO/sub 3/ buffer layer can effectively block the interdiffusion between PLZT and Si only when this layer has fully covered the Si substrates. The SrTiO/sub 3/ layer were proposed to grow islandwisely and did not form a continuous films when deposited for short interval, leaving behind a large proportion of uncoated Si surface. Serious interaction between Si and the subsequently deposited PLZT films was thus induced. However, pronounced film-to-substrate interaction did not lead to more marked Pb-loss at film's surface. By contrast, slower crystallization kinetics of the deposited species was proposed to be the factor that caused Pb re-vaporization.