Low temperature fabrication of thin film polycrystalline Si solar cell on the glass substrate and its application to the a-Si:H/polycrystalline Si tandem solar cell

摘要

The excellent high short circuit current density (Jsc) above 24 mA/cm/sup 2/ and the efficiency of 6.8% at the 6 /spl mu/m thin cell fabricated on glass substrate is demonstrated. This advantage of high Jsc was applied to the a-Si:H(0.3 /spl mum)/polycrystalline-Si(6 /spl mu/m) tandem solar cell, which exhibits the efficiency of 10.4% and the Jsc of 11.6 mA/cm/sup 2/. We have found that the textured Si thin film can be prepared by adjusting the deposition conditions. The 4 /spl mu/m thick textured Si thin film showed an effective optical thickness of 67 /spl mu/m and corresponding effective optical pass length of 16 times the layer thickness.