首页> 外文会议> >Growth of thermoelectric Bi/sub 85/Sb/sub 15/ alloy thin films and their characterization by XRD, TEM RBS
【24h】

Growth of thermoelectric Bi/sub 85/Sb/sub 15/ alloy thin films and their characterization by XRD, TEM RBS

机译:Bi / sub 85 / Sb / sub 15 /合金热电薄膜的生长及其XRD,TEM和RBS表征

获取原文

摘要

Bismuth and antimony are semimetals. The Bi/sub (1-x)/Sb/sub x/ alloys (0.04>x>0.22) are found to show fair Seebeck coefficient suitable for thermoelectric applications. Bulk Bi/sub 85/Sb/sub 15/ alloy was prepared by the melt-quenching technique. The phase formation was confirmed by XRD. The thin films were prepared by the conventional flash evaporation technique to ensure stoichiometry and to avoid dissociation. The XRD, TEM and RBS studies were done for structural and compositional characterization of thin films. The results show that our method of preparation of bulk as well as thin films leads to no change in stoichiometry. The thicknesses of thin films as measured by the in-situ quartz crystal monitor and those evaluated from the RBS spectra agree well. The thermoelectric power measurements on thin films were made by the integral method and the data analyzed by the Jain-Verma theory to evaluate the power index in the energy dependent relaxation time, giving an idea about the nature of scattering. The detection of nature of scattering in the thin film material will help us to optimize the figure of merit and hence to enhance the thermoelectric properties.
机译:铋和锑是半金属。发现Bi / sub(1-x)/ Sb / sub x /合金(0.04> x> 0.22)显示出适度的塞贝克系数,适用于热电应用。通过熔融淬火技术制备块状Bi / sub 85 / Sb / sub 15 /合金。通过XRD确认相形成。通过常规的闪蒸技术制备薄膜以确保化学计量并避免解离。 XRD,TEM和RBS研究已经完成,用于薄膜的结构和组成表征。结果表明,我们的本体和薄膜制备方法不会导致化学计量的变化。用原位石英晶体监测器测量的薄膜厚度和通过RBS光谱评估的薄膜厚度非常吻合。通过积分法对薄膜上的热电功率进行了测量,并通过Ja那教-维尔玛(Jain-Verma)理论分析了数据,以评估取决于能量的弛豫时间中的功率指数,从而了解了散射的性质。薄膜材料中散射性质的检测将有助于我们优化品质因数,从而增强热电性能。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号