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High power low confinement AIGaAs/GaAs single quantum well laser diode operating in the fundamental lateral mode

机译：以基本横向模式工作的高功率低限制AIGaAs / GaAs单量子阱激光二极管

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《》|2001年|P.171-171|共1页
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Petrescu-Prahova; I.B.; Buda; M.;
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中图分类无线电电子学、电信技术;
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专利

1. Growth and Optimization of Extremely High-Pulse-Power Graded-lndex Separate Confinement Heterostructure Quantum Well AIGaAs/lnGaAs Diode Lasers with Broadened Waveguides [J] . J.Z.Li, R.U.Martinelli, V.B.Khalfin Journal of Electronic Materials . 2005,第2期

机译：具有加宽波导的极高脉冲功率分级INDEX分立禁闭异质结构量子阱AIGaAs / InGaAs二极管激光器的生长和优化
2. Continuous wave and pulse (2-100ns) high power AIGaAs/GaAs laser diodes (1050nm) based on high and low reflective 13th order DBR [J] . Zolotarev V. V., Leshko A. Yu, Shamakhov V. V., Semiconductor science and technology . 2020,第1期

机译：基于高反射率和低反射率13阶DBR的连续波和脉冲（2-100ns）高功率AIGaAs / GaAs激光二极管（1050nm）
3. Design and fabrication of low-threshold 1.55-/spl mu/m graded-index separate-confinement heterostructure strained InGaAsP single-quantum-well laser diodes [J] . Yamamoto N., Yokoyama K. IEEE Journal of Quantum Electronics . 1997,第7期

机译：低阈值1.55 / spl mu / m梯度折射率分离约束异质结构应变InGaAsP单量子阱激光二极管的设计与制造
4. High power low confinement AIGaAs/GaAs single quantum well laser diode operating in the fundamental lateral mode [C] . Petrescu-Prahova I.B., Buda M., Institute of Electric and Electronic Engineer Conference on lasers and electro-optics Europe . 1994

机译：高功率低限制AIGAAS / GAAS单量子孔激光二极管在基本的横向模式下操作
5. Optoelectronic devices based on low threshold strained InGaAs/GaAs quantum well lasers grown on structured substrates [D] . Frateschi, Newton Cesario 1993

机译：基于在结构化衬底上生长的低阈值应变InGaAs / GaAs量子阱激光器的光电器件
6. Narrow ridge waveguide high power single mode 1.3-μm InAs/InGaAs ten-layer quantum dot lasers [O] . Q Cao, SF Yoon, CY Liu, 2007

机译：窄脊波导高功率单模1.3μmInAs / InGaAs十层量子点激光器
7. Low-loss, low-confinement GaAs-AlGaAs DQW laser diode with optical trap layer for high-power operation [O] . Buda, M Manuela, Vleuten, van der, WC, Iordache, G, 1999

机译：具有光阱层的低损耗，低约束度的GaAs-AlGaAs DQW激光二极管，用于大功率工作
8. High-Power, High-Temperature Operation of AlInGaAs-AlGaAs Strained Single-Quantum-Well Diode Lasers [R] . Choi, H. K., Wang, C. A., Kolesar, D. F., 1991

机译：alInGaas-alGaas应变单量子阱二极管激光器的高功率，高温操作

High power low confinement AIGaAs/GaAs single quantum well laser diode operating in the fundamental lateral mode

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