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Comparison of Ritz and finite element method for stress analysis of silicon elastic elements

机译:硅弹性元件应力分析的Ritz与有限元方法比较

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The results of elastic element (EE) modeling by the Ritz variational method (RVM) for the silicon pressure sensors are compared with the results by the finite element method (FEM) using program package such as ANSYS. The influence of types of the shape functions in RVM for the analysis of the deflection and stress distributions on rectangular diaphragms is studied for 1/spl les/m/spl les/5 where size ratio m=a/b. The comparison of calculated results of the deflection and stress distribution by RVM with those by FEM shows little difference for m=1, but for m<2 all kinds of the shape functions give errors, for example with Hermite polynomials, such as a saddle form on deflection distribution. For m/spl les/2 the difference by the two methods is less than 10%. For the evaluation of displacement of piezoresistors at the most interesting points on the diaphragm, the RVM shows that the deflection and stress distribution can be estimated easily and accurately.
机译:使用ANSYS等程序包,将通过Ritz变分方法(RVM)对硅压力传感器建模的弹性元素(EE)的结果与通过有限元方法(FEM)进行的结果进行比较。对于1 / spl les / m / spl les / 5,其中尺寸比m = a / b,研究了RVM中形状函数的类型对矩形膜片的挠度和应力分布分析的影响。 RVM的挠度和应力分布与FEM的挠度和应力分布计算结果的比较表明,对于m = 1,差异不大,但是对于m <2,各种形状函数都会产生误差,例如使用Hermite多项式(如鞍形)在挠度分布上。对于m / spl les / 2,两种方法的差异小于10%。为了评估在膜片上最有趣的点处的压敏电阻的位移,RVM显示可以轻松而准确地估计挠度和应力分布。

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