Macro-Model for Post-Breakdown 90NM and 130NM Transistors and its Applications in Predicting Chip-Level Function Failure after ESD-CDM Events

摘要

A post-breakdown transistor macro-model for 90nm and 130nm technologies is presented and experimentally verified. Oxide breakdown does not necessarily imply function failure. The location of breakdown within the circuit is also important. A simulation methodology implementing this macro-model is presented. This tool can be used to predict function failure for three different system-on-chip (SoC) design examples. Simulations agree well with failure analysis (FA) observations, verifying the validity of the macro-model