Simulation of Limited-Small Single-Contact Photodetector of Visible Range with Vertical Colour Division Integrated into Infrared Photodetector Cell Gap

摘要

This article represents the results of simulation of bulk integrated, minimized in size photosensitive cells with bulk colour division (R, G, B) of the visible spectral range, having one terminal displaced, due to the absence of the area, together with transistors of reading circuits (and partially under them) in gaps of infrared detector cells into CMOS structure. Single-contact three-color cell has an additional channel through which photodiodes may exchange current carriers due to the appropriate voltage applied to the surface contact and common for all the cells base and thus transfers accumulated charges to reading circuits.