Resistive switching characteristics of epitaxial La0.67Sr0.33MnO3 films for nonvolatile memory applications

摘要

The nonvolatile and reversible resistive switching characteristics of epitaxial La0.67Sr0.33MnO3 films prepared by a pulsed laser deposition (PLD) technique were investigated. Clear resistance switching cycles were observed at room temperature under voltage pulses of ~100ns duration. Reproducible switching properties, involving low write threshold voltage, active pulse width window and long endurance lifetime, demonstrate well controllability with respect to future nonvolatile random access memory applications.