Evidence of Existence of Different Surface States in INP-Based High Electron Mobility Transistors (HEMTs)

摘要

We have provided direct evidence of the existence of two different kinds of surface traps in InAlAs/InGaAs high electron mobility transistors through measurement of the device transient drain current. The mechanisms that were responsible for the observed drain current transient at different gate voltages have been proposed. In addition, two different kinds of interface traps with distinct time constants have been measured.