Enhanced Carrier Transport in Strained Bulk N-MOSFETs with Silicon-Carbon Source/Drain Stressors

摘要

We report the demonstration of strained n-channel transistor with silicon-carbon (Si1-yCy) source/drain (S/D) stressors for enhanced drive current Ion, performance. At a fixed DIBL of 0.15 V/V, n-FETs with Si1-yCy S/D demonstrate a significant Ion, improvement of 30% over the unstrained control n-FETs. This improvement is attributed to the carrier mobility gain as a result of the lateral tensile strain and vertical compressive strain in the transistor channel.