5.8GHz high frequency circuits using low frequency circuit configuration for low power-consumption and high integration

摘要

A significant increase in the speed of Si transistors has been achieved in recent years. Circuit forms that were previously applied to low frequency operation are now being realized in high frequency circuits. Therefore, low electrical power consumption and higher integration are becoming more advanced. We recognize that the essence of this drastic change in circuit technology is the conversion of circuits from the electrical power transmission form to the voltage transmission form. It is necessary to use small transistors so that the output impedance of the small transistors does not include a reactance component. Based on this idea, we used the SiGe BiCMOS process to design and fabricate an ASK modulator and a receiver mixer for 5.8GHz operation. The former device has a current drain of 6.5mA and a 38.2dB ON/OFF ratio, while the latter device has a drain of 3.4mA at 2V supply.