Novel 20nm hybrid SOI/bulk CMOS technology with 0.183/spl mu/m/sup 2/ 6T-SRAM cell by immersion lithography

摘要

For the first time, a novel hybrid SOI/bulk CMOS technology with 20nm gate length and low-leakage 1.3nm thick SiON gate dielectric has been developed for advanced SOC applications. 26% (for N-FET) and 35% (for P-FET) improvements of intrinsic gate delay (CV/I) at low gate leakage of 20-40A/cm/sup 2/ have been achieved over previous leading-edge 45nm node version, while maintaining the same sub-threshold leakage (100nA//spl mu/m). 10 times reduction of the leakage can be further modulated by a virtual back-gate control. Fine patterning with line pitch of 90nm by immersion lithography is demonstrated, which features 0.183/spl mu/m/sup 2/ 6T-SRAM cell for 32nm node on-trend scaling.