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Growth rate of a-Si:H film influenced by magnetic field gradient in MWECR CVD plasma system

机译:MWECR CVD等离子体系统中a-Si:H薄膜的生长速率受磁场梯度的影响

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摘要

In this paper, the magnetic field profiles, which were produced by three ways in the deposition chamber and plasma chamber of single coil divergent field microwave electronic circle resonance chemistry vapor deposition (MWECR CVD) system, was investigated. Then the magnetic field gradient of these magnetic field profiles was obtained quantitatively by using Lorentz fit. The results indicated that the gradient value of the magnetic field profile nearby the substrate, which was produced by a coil current with 137.7A if a SmCo permanent magnet was equipped below the substrate holder, is the largest, and the highest deposition rate of the hydrogenated amorphous silicon (a-Si:H) film was observed in this condition.
机译:本文研究了在单线圈发散场微波电子圆共振化学气相沉积(MWECR CVD)系统的沉积室和等离子体室中通过三种方式产生的磁场分布。然后通过使用洛伦兹拟合定量地获得这些磁场分布的磁场梯度。结果表明,如果在衬底支架下方装有SmCo永磁体,则线圈电流为137.7A时,衬底附近磁场分布的梯度值最大,且沉积率最高。在此条件下观察到非晶硅(a-Si:H)膜。

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