The study of etching selectivity between InGaAs and AlGaAs in acid based etching solution

摘要

The etching selectivity of AlGaAs and InGaAs was studied and analyzed. Different chemical solutions and compositions were varied to study the etch rate effect between these two materials. The etching rates and selectivity of the H/sub 3/PO/sub 4/:H/sub 2/O/sub 2/:H/sub 2/O, H/sub 2/SO/sub 4/:H/sub 2/O/sub 2/:H/sub 2/O and C/sub 6/H/sub 8/O/sub 7/:H/sub 2/O/sub 2/ is compared. The results show that the C/sub 6/H/sub 8/O/sub 7/:H/sub 2/O/sub 2/ chemical solution exhibits higher etch rate and significant selectivity in comparison with H/sub 3/PO/sub 4/:H/sub 2/O/sub 2/:H/sub 2/O, H/sub 2/SO/sub 4/:H/sub 2/O/sub 2/:H/sub 2/O.