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Impact ionization and band-to-band tunneling in ultrathin body SOI devices with undoped channels

机译：具有未掺杂通道的超薄体SOI器件中的碰撞电离和带间隧穿

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In this paper, we investigate leakage currents due to impact ionization and band-to-band tunneling effects in FD SOI transistors using energy balance simulations.

机译：在本文中，我们使用能量平衡仿真研究了FD SOI晶体管中由于碰撞电离和带间隧穿效应而引起的泄漏电流。

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《》|2003年|p.166-167|共2页
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Luyken; R.J.; Hartwich; J.; Specht; M.; Dreeskornfeld; L.; Stadele; M.; Rosner; W.; Hofmann; F.; Landgraf; E.; Schulz; T.; Kretz; J.; Risch; L.;
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中图分类无线电电子学、电信技术;
关键词
silicon-on-insulator; elemental semiconductors; impact ionisation; MOSFET; tunnelling; impact ionization; tunneling effect; leakage current; fully depleted SOI transistor; energy balance simulation; Si;

机译：绝缘体上硅;元素半导体;冲击电离; MOSFET;隧道效应;冲击电离;隧道效应;漏电流; SOI晶体管完全耗尽;能量平衡模拟; Si;

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1. Impact ionization and band-to-band tunneling in In_xGa_(1-x)As PIN ungated devices: A Monte Carlo analysis [J] . B. G. Vasallo, T. Gonzalez, V. Talbo, Journal of Applied Physics . 2018,第3期

机译：In_xGa_（1-x）As PIN非离子化设备中的碰撞电离和带间隧穿：蒙特卡洛分析
2. A non-local impact ionization/lattice temperature model for VLSI double-gate ultrathin SOI NMOS devices [J] . Ker-Wie Su, Kuo J.B. IEEE Transactions on Electron Devices . 1997,第2期

机译：VLSI双栅极超薄SOI NMOS器件的非局部碰撞电离/晶格温度模型
3. Closed-form breakdown voltage model for PD SOI NMOS devices considering impact ionization of both parasitic BJT and surface MOS channel simultaneously [J] . Shih-Chia Lin, Kuo J.B. IEEE Transactions on Electron Devices . 2002,第11期

机译：同时考虑寄生BJT和表面MOS沟道的碰撞电离的PD SOI NMOS器件的闭合形式击穿电压模型
4. Impact ionization and band-to-band tunneling in ultrathin body SOI devices with undoped channels [C] . R. J. Luyken, J. Hartwich, M. Specht, IEEE International Silicon on Insulator Conference . 2003

机译：用未掺杂通道的超薄体SOI器件中的冲击电离和带状带隧穿
5. Impact of mechanical stress on silicon and germanium metal-oxide-semiconductor devices: Channel mobility, gate tunneling currents, threshold voltage, and gate stack [D] . Choi, Youn Sung 2008

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6. Engineered tunneling layer with enhanced impact ionization for detection improvement in graphene/silicon heterojunction photodetectors [O] . Jun Yin, Lian Liu, Yashu Zang, 2021

机译：工程隧穿层具有增强的抗冲电离用于石墨烯/硅异质结光电探测器的检测改进
7. Enhanced Band-to-Band Tunneling-Induced-Hot-Electron Injection in P-Channel Flash by SiGe Channel and HfO2 Tunnel Dielectric [O] . Chi-chao Wang, Kuei-shu Chang-liao, Chun-yuan Lu, 2015

机译：siGe沟道和HfO2隧道介质在p沟道闪光中增强带间隧穿引发的热电子注入
8. Evidence for Band-to-Band Impact Ionization in Evaporated ZnS:Mn Alternating-Current Thin-Film Electroluminescent Devices [R] . Ang, W. M., Pennathur, S., Pham, L., 1995

机译：蒸发Zns：mn交流薄膜电致发光器件中带间碰撞电离的证据

Impact ionization and band-to-band tunneling in ultrathin body SOI devices with undoped channels

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