Characterization of MOCVD lateral epitaxial overgrown III-V semiconductor layers on GaAs substrates

摘要

We have studied the lateral epitaxial overgrowth by MOCVD of a variety of highly mismatched III-V semiconductors on GaAs substrates. For [001] substrates we determined the oxide stripe orientation that gives the maximum lateral growth rate to be /spl sim/ 25/sup o/ from [110]. We successfully achieved that lateral overgrowth of In/sub x/Ga/sub 1-x/As alloys on GaAs and found that the use of Bi as a surfactant led to an improvement in the morphology and luminescence uniformity. The studies have been extended to the lateral epitaxial overgrowth of InAs, GaP, and InP.