photodetectors; infrared detectors; quantum well devices; silicon compounds; red shift; aluminium compounds; optical signal detection; III-V semiconductors; energy gap; infrared spectra; wavelength tuning detection; quantum well infrared-photodetector; quantum well intermixing technique; QWIP; impurity free vacancy disordering technique; SiO/sub 2/ capping layer; atoms intermixing; multiple quantum well absorption region; red-shift; gap narrowing; confined state; continuum state; conduction band; blue-shift; MQW bandgap; Al-Ga inter-diffusion; 8.2 to 10 micron; 850 C; SiO/sub 2/; AlGa;
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