Spontaneous emission measurements of tensile strained GaInP laser diodes

摘要

Measurements of the spontaneous recombination current, quasi-fermi level separation and gain spectra as a function of current density provide a complete characterisation of the semiconductor laser gain medium. This is particularly useful for analysing the benefits of strain in, for example, GaInP short wavelength laser diodes. In this work we present a novel technique that enables us to measure both the TE and TM polarised true spontaneous emission spectra of GaInP tensile strained devices as a function of quasi-fermi level separation. Using these results we are able to assess the affect of strain on all the significant recombination pathways within the device for a given value of gain requirement.