Nanofabrication of heavily carbon doped p-type GaAs by atomic force microscope nano-oxidation process and its application to single hole transistors

摘要

Scanning probe microscopes (SPMs), such as scanning tunneling microscopes (STMs) and atomic force microscopes (AFMs), are now routinely used as tools of not only observing surfaces but also fabricating nanoscale structures, by means of tip-induced oxidation of localized regions. In this study, we successfully oxidized heavily carbon doped p-type GaAs films by AFM nano-oxidation process and applied them to realize single hole transistors (SHTs).