The side wall inclination of a PMMA microstructure fabricated by deep X-ray lithography has been controlled by moving an X-ray mask in parallel with a PMMA substrate during X-ray exposure. In order to demonstrate the feasibility of this moving mask technology, various conical shape and truncated conical shape microstructures with height of 100-300 /spl mu/m and a diameter of the top and the bottom of truncated conical structures between 0-310 /spl mu/m were fabricated.
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机译：通过在X射线曝光期间将X射线掩模与PMMA基板平行移动，可以控制通过深X射线光刻技术制造的PMMA微观结构的侧壁倾斜度。为了证明这种移动掩模技术的可行性，高度为100-300 / spl mu / m且截顶圆锥形结构的顶部和底部的直径为0-310 / spl的各种圆锥形和截头圆锥形微观结构微米/米。
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