An SOI 0.6 mV offset temperature-compensated Hall sensor readout IC for automotive applications up to 200/spl deg/C

摘要

A Hall sensor readout IC operating over a temperature range up to 200/spl deg/C is fabricated using a thin-film SIMOX process. The circuit operates as a time continuous magnetically activated switch. To compensate the temperature dependent sensitivity of the Hall plate, the comparator thresholds have a defined temperature dependence. An on-chip voltage regulator supplies the bias voltage to the Hall plate. The 6 to 30 V supply range and the 200/spl deg/C external temperature range make the IC well suited for automotive applications.