Silica-based planar optical waveguide devices by TEOS/O/sub 3/ APCVD method

摘要

We demonstrate that, with our tetraethoxysilane (TEOS)/O/sub 3/ atmospheric pressure (AP) CVD method, metal materials for etching masks and electrical wiring can be formed directly on Si before silica film deposition, which makes this method extremely attractive for highly functional hybrid-integrated optical modules. Hybrid-integrated optical transceivers and SOA gate matrix switches have been demonstrated with this method.