A wideband AlGaAs/GaAs heterojunction bipolar transistor amplifier optimized for low-near-carrier-noise applications up to 18 GHz

摘要

A wideband AlGaAs/GaAs HBT Darlington feedback amplifier has been optimized for low near-carrier noise. The amplifier has 10 dB gain and a 3 dB bandwidth of 18 GHz. The amplifier has a residual phase noise of -156 dBc/Hz at 1 KHz offset from the carrier (2.23 GHz). This near-carrier performance is superior to that of amplifiers realized with other device technologies capable of similar bandwidths.