The carrier transport in the GaSb/AiSb/lnAs/GaSb/AlSb/InAs resonant interband tunneling structures

摘要

The negative differential resistance (NDR) characteristics of GaSb/AlSb/GaSb/AISb/lnAs double barrier structure were improved by incorporating an InAs blocking layer into the well region, i.e. GaSb/AlSb/InAs/GaSb/AlSb/InAs structure. The multiple NDR behaviors as well as high peak-to-valley ratios (PVRs) were observed with appropriate InAs well width. The three-band model was used to investigate the effect of the InAs well on the current-voltage characteristics of GaSb/AlSb/lnAs/GaSb/AISb/lnAs structures.