Measurements of the series resistance R/sub S/ are important for the localisation of dominant loss mechanisms in photovoltaic devices. The new measurement technique presented in this work uses the measured "J/sub SC/-V/sub OC/ curve" of a solar cell as an approximation to the unknown R/sub S/-corrected I-V curve and determines the "lumped series resistance" in dark and illuminated operating conditions (R/sub s.dark/ and R/sub s.light/) from the voltage shift between the "J/sub SC/-V/sub O/C curve" and the dark and illuminated I-V curve, respectively. Owing to multidimensional effects in practical devices, the lumped series resistance depends on the operating condition of the cell (i.e., dark or illuminated I-V measurements) and on the current density flowing through the device. This work not only provides a new, powerful method for the determination of the lumped series resistance of photovoltaic devices, but also considerably improves the general understanding of ohmic power loss effects in silicon solar cells.
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机译：串联电阻R / sub S /的测量对于光伏器件中主要损耗机制的定位很重要。在这项工作中提出的新的测量技术使用太阳能电池的测量的“ J / sub SC / -V / sub OC /曲线”作为未知R / sub S /校正后的IV曲线的近似值，并确定“集总序列”。电阻”在黑暗和光照条件下（“ R / sub sark / R / sub s.light /”）通过“ J / sub SC / -V / sub O / C曲线”与黑暗和分别照亮了IV曲线。由于实际设备中的多维效应，集总串联电阻取决于电池的工作条件（即，暗或照亮的I-V测量值）以及流经该设备的电流密度。这项工作不仅为确定光伏器件的集总串联电阻提供了一种强大的新方法，而且还大大提高了人们对硅太阳能电池中欧姆功率损耗影响的一般理解。
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