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A study on the optical and microstructural characteristics of quaternary Cu(In,Ga)Se/sub 2/ polycrystalline thin films

机译:四元Cu(In,Ga)Se / sub 2 /多晶薄膜的光学和微观结构特性研究

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The optical and microstructural properties of polycrystalline CuIn/sub 1-y/Ga/sub y/Se/sub 2/ (CIGS) thin film deposited by coevaporation are reported within the boundaries of an orthogonal experimental design investigating the effects of Cu flux, Ga/(Ga+In) composition. Se rate, substrate temperature, T/sub s/ and substrate type. The optical bandgaps for near-stoichiometric CuIn/sub 1-y/Ga/sub y/Se/sub 2/ are smaller and exhibit bowing behavior which follows the relationship E/sub g/=1.011+0.664y+0.249y(y-1). In comparison, Cu-poor films exhibit a linear variation with zero bowing given by E/sub g/=1.0032+0.71369y. The increase in E/sub g /with decreasing Cu may result in part from lattice shrinkage as measured by X-ray diffraction (XRD). Optical absorption below the band edge appears to be dependent upon both Cu and Ga content. Absorption coefficients of alpha or=10/sup 3/ cm/sup -1/ may be dictated more by surface morphology and possible phase separation in films containing
机译:在正交实验设计的范围内,报道了通过共蒸发沉积的多晶CuIn / sub 1-y / Ga / sub y / Se / sub 2 /(CIGS)薄膜的光学和微观结构性质,研究了铜通量Ga的影响/(Ga + In)组成。硒率,基板温度,T / sub s /和基板类型。接近化学计量的CuIn / sub 1-y / Ga / sub y / Se / sub 2 /的光学带隙较小,并且弯曲行为遵循E / sub g / = 1.011 + 0.664y + 0.249y(y- 1)。相比之下,贫铜薄膜的弯曲度为零,弯曲度由E / sub g / = 1.0032 + 0.71369y给出。 E / sub g /随Cu的增加而增加,可能部分是由X射线衍射(XRD)测量的晶格收缩引起的。带边缘以下的光吸收似乎取决于Cu和Ga的含量。在该区域内α<或= 10 / sup 3 / cm / sup -1 /的吸收系数指示富Cu膜。大于或等于10 / sup 3 / cm / sup -1 /的吸收率可能更多地取决于表面形态以及在含<或= 50%Ga的薄膜中可能发生的相分离。α的大小从等效值变化为2 * 10 / sup 4对于接近化学计量的薄膜,在接近边缘的1 ev处,带边缘尖端附近的λ为10 / sup 5 / cm / sup -1 /,而贫铜薄膜中的吸收稍小。

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