Tungsten-titanium sputtering target processing effects on particle generation and thin film properties for VLSI applications

摘要

The relationship between W-Ti target processing techniques, target structure, and deposited film quality is examined. Targets produced by three different methods are evaluated in terms of microstructure, purity, and their influence on the deposited film properties, with emphasis on film defect density. It is shown that the target manufacturing technique and the material purity have a significant impact on the defect density of the deposited films. Oxygen content as well as void pressure in the different targets can be assumed to be partly responsible for the observed results.