An analysis was carried out of SOI/SIMOX structures obtained by sequential implantation and annealing (SIA). The analysis of these structures has been made in relation to those obtained by an equivalent standard single implant and anneal (SS structures), by means of infrared reflection spectroscopy. The use of a fast Fourier transform infrared (FTIR) system allows the combination of a low measuring time of the spectra (on the order of several minutes) with a high spectral resolution (up to 0.02 cm/sup -1/). Complementary optical measurements such as photoluminescence and Raman spectroscopy using different excitation powers and wavelengths reveal the higher quality of the surface region of the top silicon layer free of precipitates in the SIA material. These data, together with the FTIR results, show the potential of the SIA technique for obtaining high quality quasi-ideal SOI structures.
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机译：对通过顺序注入和退火（SIA）获得的SOI / SIMOX结构进行了分析。已经通过红外反射光谱对与通过等效标准单次注入和退火（SS结构）获得的结构进行了分析。快速傅里叶变换红外（FTIR）系统的使用可将光谱的低测量时间（几分钟左右）与高分辨率（最高0.02 cm / sup -1 /）结合起来。互补的光学测量，例如使用不同激发功率和波长的光致发光和拉曼光谱，揭示了SIA材料中无沉淀的顶部硅层表面区域的更高质量。这些数据与FTIR结果一起显示了SIA技术在获得高质量准理想SOI结构方面的潜力。
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