As-deposited low-strain LPCVD polysilicon

摘要

As-deposited polysilicon films with very low residual strain (lower than 5*10/sup -5/) are obtained by a low-pressure, chemical-vapor-deposition (LPCVD) process. Straight polysilicon bridges 300 mu m long, 1.2 mu m thick, and 2 to 20 mu m wide, have been made using this process. No buckling has been observed in any of the nearly 1000 bridges of this type made in two separate process runs. In addition, no problems of sticking between the bridges and the substrate were encountered with these structures.