Electrical spin injection from an iron-rich iron-platinum thin film into gallium arsenide

摘要

We fabricated an FePt/MgO tunneling junction (Fe_(55)Pt_(45)) with out-of-plane magnetization on a GaAs-based light-emitting-diode structure. The technique of spin-polarized electroluminescence (EL) was used to study the electrical spin injection from FePt into GaAs at room temperature. Under the magnetic field of 1 T the spin polarization of the injected electrons was at least 6.0%. The zero-magnetic-field spin polarization, which indicates the spin injection without magnetic field, was at least 3.3%.