首页> 外文会议>International Symposium for Testing and Failure Analysis(ISTFA 2004); 20051106-10; San Jose,CA(US) >The Enhancement of Abnormal Photon Emission Identification for Advanced Processes using a Backside Cooling PEM System
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The Enhancement of Abnormal Photon Emission Identification for Advanced Processes using a Backside Cooling PEM System

机译:使用背面冷却PEM系统增强先进工艺中异常光子发射的识别

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As manufacturing technology allows semiconductor feature size to shrink, the operating current maximum allowable device leakage is reduced. Because of this, it is more difficult to differentiate abnormal photon emission spots from normal emission spots on more advanced devices, especially 0.13um and smaller process technologies. The sensitivity of a photon emission microscope (PEM) is not sufficient to differentiate the abnormal photon emissions from normal device leakage emissions. In addition, high chip temperature makes device leakage emissions more prominent. This paper will present the principle of weak photon emission inspection enhancement and the development of a backside cooling system based on the present PEM. It is an efficient and economical way to localize failures based on the present PEM. The enhanced PEM tool stabilizes the chip current and operating temperature to lessen the emissions due to normal device leakage using a backside cooling system.
机译:由于制造技术允许缩小半导体特征的尺寸,因此减小了最大允许工作电流泄漏的工作电流。因此,在更先进的设备上,尤其是在0.13um和更小的工艺技术上,很难将异常光子发射点与正常发射点区分开。光子发射显微镜(PEM)的灵敏度不足以区分异常光子发射与正常设备泄漏发射。另外,较高的芯片温度使器件泄漏排放更加突出。本文将介绍增强弱光子发射检查的原理以及基于当前PEM的背面冷却系统的开发。这是一种基于当前PEM定位故障的有效而经济的方法。增强的PEM工具使用背面冷却系统稳定芯片电流和工作温度,以减少由于正常设备泄漏而产生的辐射。

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