首页> 外文会议>International Conference on Thin Film Physics and Applications; 20070925-28; Shanghai(CN) >The Effect of Bias Voltage on the Morphology and Wettability of Plasma Deposited Titanium Oxide Films
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The Effect of Bias Voltage on the Morphology and Wettability of Plasma Deposited Titanium Oxide Films

机译:偏置电压对等离子体沉积二氧化钛薄膜形貌和润湿性的影响

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摘要

Hydrophobic and hydrophilic films with titanium oxide inside were grown by radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) on glass substrates. Bias voltage was used as an assistant for the deposition process. And a comparison was made between with and without the bias voltage. Titanium tetraisopropoxide (TTIP-Ti (OC_3H_7)_4) was used as the precursor compound. Film wettability was tested by water contact angle measurement (CAM). The water contact angle (WAC) of the film deposited in plasma without biased voltage was greater than 145°, while the WAC of the film deposited in plasma with biased voltage was less than 30~0. The morphology of the deposited films was observed by scanning electron microscope (SEM). It is found that the films grown without bias voltage were covered with lots of nano grain and pores, but the surface of the films deposition with bias voltage was much dense. The chemical structure and property of the deposited films were analyzed by Fourier-transformed infrared spectroscopy (FTIR), while the plasma phase was investigated by optical emission spectroscopy (OES).
机译:通过射频等离子体增强化学气相沉积(RF-PECVD)在玻璃基板上生长内部具有二氧化钛的疏水膜和亲水膜。偏置电压用作沉积过程的辅助。并在有和没有偏置电压之间进行了比较。使用四异丙氧基钛(TTIP-Ti(OC_3H_7)_4)作为前体化合物。通过水接触角测量(CAM)测试膜的润湿性。在没有偏压的情况下沉积在等离子体中的膜的水接触角(WAC)大于145°,而在有偏压的情况下沉积在等离子体中的膜的WAC小于30-0。通过扫描电子显微镜(SEM)观察沉积膜的形态。发现在没有偏压的情况下生长的膜被许多纳米颗粒和孔覆盖,但是在有偏压的情况下沉积的膜的表面致密得多。沉积膜的化学结构和性能通过傅立叶变换红外光谱(FTIR)进行了分析,而等离子体相则通过光学发射光谱(OES)进行了研究。

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