Delta doped AlGaN and AlGaN/GaN HEMTs: Pathway to improved performance?

摘要

The electrical characteristics of delta doped HEMTs were measured using C-V, Lehighton sheet resistance and 300°K Hall mobility techniques. Spacer layer thickness and dopant concentration were found to have a significant impact on the electron mobility and electron gas carrier density in the 2DEG. The product μ-N_s of delta doped HEMTs can be optimized by varying the position of the delta doped layer and the dopant concentration to develop HEMT devices with high transconductance.