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Anatomy of the ICDS series: A bibliometric analysis

机译:ICDS系列剖析:文献计量分析

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摘要

In this article, the proceedings of the International Conferences on Defects in Semiconductors (ICDS) have been analyzed by bibliometric methods. The papers of these conferences have been published as articles in regular journals or special proceedings journals and in books with diverse publishers. The conference name/title changed several times. Many of the proceedings did not appear in the so-called "source journals" covered by the Thomson/ISI citation databases, in particular by the Science Citation Index (SCI). But the number of citations within these source journals can be determined using the Cited Reference Search mode under the Web of Science (WoS) and the SCI offered by the host STN International. The search functions of both systems were needed to select the papers published as different document types and to cover the full time span of the series. The most cited ICDS papers were identified, and the overall numbers of citations as well as the time-dependent impact of these papers, of single conferences, and of the complete series, was established. The complete of citing papers was analyzed with respect to the countries of the citing authors, the citing journals, and the ISI subject categories.
机译:在本文中,已通过文献计量法分析了国际半导体缺陷会议(ICDS)的会议记录。这些会议的论文已作为文章发表在常规期刊或特殊议事杂志上,并在各种出版商的书中发表。会议名称/标题更改了几次。许多程序没有出现在Thomson / ISI引文数据库,特别是科学引文索引(SCI)所涵盖的所谓“来源期刊”中。但是,可以使用Web of Science(WoS)和主办方STN International提供的SCI下的被引参考检索模式来确定这些源期刊中的被引数量。需要使用两个系统的搜索功能来选择以不同文档类型发布的论文,并覆盖该系列的整个时间范围。确定了引用最多的ICDS论文,并确定了这些论文,单个会议和整个系列论文的引用总数以及其时间依赖性。分析了完整的引文,涉及了引文作者所在国家/地区,引文期刊和ISI主题类别。

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