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Analysis of Interlayer between WC-Co and CVD Diamond Film

机译:WC-Co与CVD金刚石膜之间的夹层分析

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摘要

Electroplated Cr, Ni and Cu were used as interlayer for chemical vapor deposition (CVD) diamond coating on WC-Co cemented carbide cutting tools. The electroplated interlayers were studied by Scanning Electron Microscope (SEM), Electron Probe Micro Analyzer (EPMA) and X-ray diffraction (XRD). The CVD diamond coatings were studied by SEM and Raman Scattering Spectroscopy (Raman). The experimental results show that there is diffusion bonded interface between electroplated layer and WC-Co substrate after H plasma treatment, the bond between electroplated layers and WC-Co substrate changes from mechanical bond to metallurgical bond and the adhesion becomes stronger. Electroplated Cr interlayer forms new phases of Cr_3C_2 and Cr_7C_3 under CVD conditions, while electroplated Ni and Cu interlayers do not form carbides under CVD conditions. Cr carbides have good chemical compatibility to diamond, and they are propitious to diamond nucleation and growth during the deposition period. The diamond crystal microstructure, diamond quality and adhesion on Cr interlayer are better than those on electroplated Ni and Cu interlayers.
机译:电镀的Cr,Ni和Cu用作中间层,用于在WC-Co硬质合金切削刀具上进行化学气相沉积(CVD)金刚石涂层。通过扫描电子显微镜(SEM),电子探针显微分析仪(EPMA)和X射线衍射(XRD)研究电镀的中间层。通过SEM和拉曼散射光谱法(Raman)研究了CVD金刚石涂层。实验结果表明,H等离子体处理后的电镀层与WC-Co基体之间存在扩散结合界面,电镀层与WC-Co基体之间的结合由机械结合变为冶金结合,附着力增强。电镀的Cr中间层在CVD条件下形成Cr_3C_2和Cr_7C_3的新相,而电镀的Ni和Cu中间层在CVD条件下不形成碳化物。碳化铬与金刚石具有良好的化学相容性,并且在沉积期间有利于金刚石成核和生长。 Cr中间层的金刚石晶体组织,金刚石质量和附着力均优于电镀Ni和Cu中间层。

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