Simulation of collector induced voltage in high-power multiple-beam klystron

摘要

The paper deals with the effect of external electrical circuits on the conditions in high-power multiple-beam klystron collectors. A mathematical model describing the induced voltage on the collector of the 0-type devices with allowance for external electrical circuits taking into account the electric field distribution is presented The possibility of reducing the collector induced voltage when using external capacitive elements and new collector design is shown.