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Performance Analysis of Eighteen Element Dolph-Chebyshev Linear Array at Different Side Lobe Level

机译:不同旁瓣电平下的18元Dolph-Chebyshev线性阵列的性能分析

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This paper presents the linear array, which is designed by using Dolph-Chebyshev method. This method provides a trade-off between two important parameters i.e. beam-width and least (minimum) side-lobe level. By using this method we get the narrowest beam width for specified side lobe level and vice versa. There are several method available in the literature to reduce side lobe level to save power and to improve the quality of service. However, in present work, an array of 18-element generated for given side lobe, 28.8dbi. The resultant patterns are compared for different side lobe and show that the gain and directivity is not necessarily increased when side lobe level decreases.
机译:本文介绍了线性阵列,它是使用Dolph-Chebyshev方法设计的。该方法提供了两个重要参数之间的权衡,即波束宽度和最小(最小)旁瓣电平。通过使用这种方法,对于指定的旁瓣电平,我们可以获得最窄的波束宽度,反之亦然。文献中提供了几种方法来降低旁瓣水平,以节省功率并提高服务质量。但是,在目前的工作中,对于给定的旁瓣28.8dbi,生成了18个元素的数组。比较了针对不同旁瓣的所得模式,结果表明,当旁瓣电平降低时,增益和方向性不一定会增加。

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