首页> 外文会议>International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII >Large Strain Measurements by Vacuum-Packaged Mems Resonators Manufactured on Ultrathin Silicon Chips
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Large Strain Measurements by Vacuum-Packaged Mems Resonators Manufactured on Ultrathin Silicon Chips

机译:通过超薄硅芯片上制造的真空包装的Mem谐振器进行大应变测量

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Silicon resonators fabricated with wafer-level vacuum packaging on ultrathin silicon chips (overall thickness around 60 μm) are utilized for strain measurements on steel slabs. The thinned chips are glued on steel using M-bond 610 and Loctite EA 9461 adhesives and the sensor response during bending tests performed while operating the resonators in closed loop is measured, evaluating possible non-ideal effects such as creep and hysteresis. In the measurements, the results obtained on the ultrathin chips are compared with those achieved on sensors manufactured on the native 500 μm thick silicon substrates. The results obtained show an astonishing improvement in the measurements realized with the thinned chips, which show creep levels below 0.1%, no appreciable hysteresis phenomena and strain measurement range extended beyond 850 με, indicating that chip thinning can be a viable way to obtain high-quality strain measurements on a large range by vacuum-packaged silicon MEMS resonators
机译:在超薄硅芯片(总厚度约60μm)上以晶圆级真空封装制造的硅谐振器用于在钢坯上进行应变测量。使用M-bond 610和Loctite EA 9461粘合剂将变薄的芯片粘在钢上,并测量在使谐振器以闭环运行时进行的弯曲测试期间的传感器响应,评估可能的非理想影响,例如蠕变和磁滞现象。在测量中,将在超薄芯片上获得的结果与在天然500μm厚的硅基板上制造的传感器上获得的结果进行比较。获得的结果表明,使用减薄的芯片实现的测量结果有了惊人的改善,蠕变水平低于0.1%,没有明显的磁滞现象,应变测量范围扩展到850με以上,这表明芯片变薄是获得高厚度的可行方法。真空封装的硅MEMS谐振器在大范围内进行高质量应变测量

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