首页> 外文会议>International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII >CMOS-MEMS Tri-Axial Piezo-Resistive Tactile Sensor with Monolithically/Vertically Integrated Inductive Proximity Sensor
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CMOS-MEMS Tri-Axial Piezo-Resistive Tactile Sensor with Monolithically/Vertically Integrated Inductive Proximity Sensor

机译:具有单片/垂直集成电感式接近传感器的CMOS-MEMS三轴压电电阻式触觉传感器

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This study demonstrates a novel tri-axial piezo-resistive tactile sensor vertically integrated with a inductive proximity sensor using standard CMOS process (Fig. 1). Normal and shear loads sensing capabilities are achieved by measuring the signal changes of four piezo-resistive cross beams. The proposed sensor design has three merits: (1) the tri-axial tactile sensing unit and the proximity sensing unit can be vertically integrated on one chip, (2) normal and shear loads can be detected by four discrete piezo-resistive sensing elements, (3) the footprint of the chip can be reduced due to the vertical integration of sensing elements. The measurements demonstrate the capabilities of tactile sensing for both normal and shear loads and proximity sensing. The testing results indicate that the proposed tri-axial piezo-resistive tactile sensor shows the normal load (Z-axis) sensitivity of 0.55 mV/N, the X-axis shear load sensitivity of 1.3 mV/N, and the Y-axis shear load sensitivity of 0.76 mV/N.
机译:这项研究表明,采用标准CMOS工艺与感应式接近传感器垂直集成的新型三轴压阻式触觉传感器(图1)。通过测量四个压阻横梁的信号变化来实现法向载荷和剪切载荷感测能力。所提出的传感器设计具有三个优点:(1)三轴触觉感测单元和接近感测单元可以垂直集成在一个芯片上;(2)可以通过四个分立的压阻感测元件检测法向和剪切负载, (3)由于传感元件的垂直集成,可以减少芯片的占位面积。这些测量证明了触觉感测在正常和剪切负载以及接近感测方面的能力。测试结果表明,所提出的三轴压阻式触觉传感器的法向载荷(Z轴)灵敏度为0.55 mV / N,X轴剪切载荷灵敏度为1.3 mV / N,Y轴剪切力负载灵敏度为0.76 mV / N。

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