首页> 外文会议>International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII >A Bistalbe Ultrasonic MEMS Device with an Integrated Piezoelectric Scandium-AlN Thin Film Actuator for Switching
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A Bistalbe Ultrasonic MEMS Device with an Integrated Piezoelectric Scandium-AlN Thin Film Actuator for Switching

机译:具有集成压电Scan-AlN薄膜执行器的Bistalbe超声波MEMS器件,用于开关

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) thin film actuators. The minimum voltage needed to switch between the stable states was about 23% lower than using a pure AlN layer. Depending on the membrane diameter being in the range between 600 to 800 µm, the total displacement after switching is about 10 to 16 µm. The array consists of 15 membranes on a 6x6 mm
机译:)薄膜执行器。在稳态之间进行切换所需的最小电压比使用纯AlN层低约23%。根据膜直径在600至800μm之间的范围,切换后的总位移约为10至16μm。该阵列由6x6毫米的15个膜组成

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