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Green-Light Photoresponsive Organic Field-Effect Transistor by PTCDA/Pentacene Heterojunction

机译:PTCDA /并五苯异质结的绿光光敏有机场效应晶体管

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The new organic photoelectric detector with great potential has been widely concerned and researched, especially for the photoresponsive organic field-effect transistor (photOFET). However, it is still rare for the researches on green-light photOFET. This paper aimed at green-light photOFET. The green-light photOFETs were fabricated by utilizing organic heterojunction based on PTCDA and pentacene. Under a green-light illumination (the wavelength is 532 nm), it exhibited a maximum photosensitivity of 56.15 (with power intensity of 16.5 mW/cm~2) and a maximum photoresponsivity of 19.62 A/W (with power intensity of 0.0033 mW/cm~2), which were greater than that of PTCDA single-layer photOFET. These results indicate that the heterojunction photOFET based on PTCDA and pentacene is proved to be a green-light pho-todetector with good performance.
机译:新型的,具有巨大潜力的有机光电探测器已经受到广泛的关注和研究,特别是对于光敏有机场效应晶体管(photOFET)。但是,对于绿色photOFET的研究仍然很少。本文针对的是绿色photOFET。利用基于PTCDA和并五苯的有机异质结制造了绿色photOFET。在绿光照射下(波长为532 nm),其最大光敏度为56.15(功率强度为16.5 mW / cm〜2),最大光敏度为19.62 A / W(功率强度为0.0033 mW / cm)。 cm〜2),大于PTCDA单层photOFET。这些结果表明,基于PTCDA和并五苯的异质结photOFET被证明是具有良好性能的绿光光电探测器。

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