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Novel Approach for Sleep Transistor Sizing to Suppress Power and Ground Bouncing Noise in MTCMOS Clustering Technique

机译:调整MTCMOS群集技术中睡眠晶体管尺寸的新方法以抑制功率和地跳动噪声

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In this paper, different sizes of sleep transistors with an increasing number of inverters using clustering technique are presented. Simulation result shows that delay is reduced up to 0.68 times when the width-to-length ratio is increased by 10 times in the circuit. Dynamic power is increased up to 1.24 times when W/L ratio is increased by 10 times in circuit; leakage power is increased up to 1.54 times when size is increased by 10 times in circuit; wakeup time is reduced up to 0.52 times when size is increased by 10 times in circuit; and sleep time is reduced up to 0.75 times when size is increased by 10 times in the clustering circuit.
机译:在本文中,提出了采用簇技术的不同尺寸的睡眠晶体管,其中反相器的数量不断增加。仿真结果表明,当电路中长宽比增加10倍时,延迟最多可降低0.68倍。当电路中的W / L比增加10倍时,动态功率增加到1.24倍;当电路中尺寸增加10倍时,泄漏功率将增加至1.54倍;当电路中的尺寸增加10倍时,唤醒时间最多可减少0.52倍;如果在集群电路中将大小增加10倍,则睡眠时间最多可减少0.75倍。

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