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The design and simulation of radio frequency narrow band low noise amplifier with input, output, intermediate matching

机译:输入,输出,中间匹配的射频窄带低噪声放大器的设计与仿真

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This paper presents the design and simulation of 2-stage low noise amplifier(LNA) for the application of L-band used for mobile satellite communications by using microstrip technology and focusing on development of low noise amplifier operating from 0.6GHz-1.2GHz by using Enhancement Mode Pseudomorphic HEMT ATF34143 from Avago Technologies. The design circuit uses lumped elements to implement with input, output, intermediate matching networks and purpose 2-stage is to achieve good gain. Input and output matching network is to produces 50Ω impedance for maximum power transfer. The target simulation are gain (S21) with 30 dB, noise figure (NF) with 1dB throughout the band from 0.6G–1.2GHz, Input Return loss −16dB and Output Return Loss −18dB. A 2-stage LNA has successfully designed with 35 dB forward gain, 0.56 dB noise figure, Input Return loss −16dB to −27dB and Output Return Loss −19dB to −23dB by using Advance Wireless Revolution (AWR) Microwave office tool.
机译:本文通过微带技术介绍了用于移动卫星通信的L波段的2级低噪声放大器(LNA)的设计和仿真,并着重研究了使用该技术开发工作在0.6GHz-1.2GHz的低噪声放大器的过程。 Avago Technologies的增强模式伪形态HEMT ATF34143。设计电路使用集总元件来实现输入,输出,中间匹配网络,目的是使两级达到良好的增益。输入和输出匹配网络将产生50Ω的阻抗,以实现最大的功率传输。目标仿真是在0.6G–1.2GHz的整个频带中具有30 dB的增益(S21),1dB的噪声系数(NF),输入回波损耗-16dB和输出回波损耗-18dB。通过使用高级无线革命(AWR)微波办公工具,两级LNA已成功设计了35 dB的前向增益,0.56 dB的噪声系数,输入回波损耗-16dB至-27dB和输出回波损耗-19dB至−23dB。

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