Numerical modeling of temperature effects in InGaN double Hetero-junction p-i-n solar cells

摘要

This paper studies the impact of the temperature on GaN/ InGaN solar cell devices grown with N-polar orientations in electronic and photovoltaic properties. The self-consistent model is used to determine the energy band conduction. Using this model, we have computed a set of photovoltaic parameters allowing the evaluation of photovoltaic performance. Calculations were made as a function of indium composition and the host lattice temperature. As far as the effect of polarization is concerned, this discovery allows the manufacturing of high efficiency solar cells based on nitrides.