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Low cost X-ray lithographic mask based on microsputtered lead film on Transparencies

机译:基于透明胶片上的微溅射铅膜的低成本X射线光刻掩模

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In this work, a low-cost X-ray micromask is developed by sputtering lead (Pb) film on Transparencies (Mylar) sheet substrate and the X-ray mask is experimented for patterning SU-8 negative photoresist on stainless steel substrate. Pb layer is sputtered on the substrate through Ni-electroplated microshadow masks with varying thicknesses from 8 to 19 µm. Sputtering is a suitable process for Pb thick film deposition due to its high sputtering yield. The tested pattern is 100 µm-wide microchannels, which is designed for microfluidic chip fabrication. Next, 150-350 µm thick SU-8 photoresist is spun on the stainless substrate. The Pb mask is then used for X-ray lithography by X-ray source produced by synchrotron radiation at Siam photon laboratory, Thailand. X-ray exposure is conducted with different X-ray doses and intensity. According to the experimental results, the lead film thickness of more than 10 µm is the required to block the X-ray for 200 µm thick SU-8 photoresist that requires X-ray dose of 4,200mJ/cm
机译:在这项工作中,通过在透明胶片(聚酯薄膜)基板上溅射铅(Pb)膜开发了低成本的X射线微掩模,并进行了X射线掩模实验,以在不锈钢衬底上构图SU-8负性光刻胶。通过厚度为8至19 µm的镍电镀微阴影掩模将Pb层溅射在基板上。由于其高溅射产率,溅射是用于Pb厚膜沉积的合适方法。测试的图案为100 µm宽的微通道,用于微流控芯片制造。接下来,将150-350 µm厚的SU-8光致抗蚀剂旋转到不锈钢基板上。然后,通过泰国暹罗光子实验室的同步辐射产生的X射线源,将Pb掩模用于X射线光刻。用不同的X射线剂量和强度进行X射线曝光。根据实验结果,对于200 µm厚的SU-8光刻胶,要求X射线剂量为4,200mJ / cm,才能阻挡X射线,铅膜的厚度必须大于10 µm。

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