Investigation of Thermal Noise in Trigate Junctionless Transistor

摘要

This paper presents a 3-D TCAD simulation based study of thermal noise in trigate junctionless field effect transistors (TG-JLFET). Thermal noise in JLFETs increases with channel conductivity, therefore, it is crucial to control the noise while maintaining a good conductivity of the device. This paper shows that variation in device parameters, like channel width, thickness and doping concentration, may be used to reduce thermal noise and optimize the device design for RF applications. Drain current thermal noise, induced gate noise and cross-correlation noise in TG-JLFET are studied through Sentaurus TCAD device simulator.