Performance Enhancement of GaN based blue LEDs using Bandgap Engineering in EBL and Quantum Wells

摘要

In this paper a new structure of GaN based blue LED is proposed to improve the electrical as well as the optical performance of the LED. Numerical simulations have been carried out to observe the device performance under varying input current. In order to determine the output power, internal quantum efficiency and the carrier concentration in the wells, a 6×6 Kohn-Luttinger Hamiltonian is solved. The luminous power, spectral characteristics, IQE as well as the radiative recombination rate have been simulated. The results suggest an improvement in the output light power of the proposed led structure as well as improvement in the efficiency droop performance.