The fabrication and research Of 4H-Sic Schottky metal-semiconductor-metal ultraviolet photodetectors

摘要

The fabrication and characterization of 4H-SiC Schottky metal-semiconductor-metal(MSM) photodetectors are reported in this paper. The current-voltage(I-V), capacitance-voltage(C-V) and spectral response characterization of the photodetectors are measured at room temperature. The dark current is 1.24×10