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Design and Defect Analysis of Novel NAND/NOR Gate in Quantum-dot Cellular Automata

机译:量子点元胞自动机中新型NAND / NOR门的设计与缺陷分析

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Quantum-dot Cellular automata is an emerging post-CMOS technology which offers promising features such as high speed, high packaging density and low power. It has led to the emergence of several circuit designs in Quantum-dot Cellular Automata. Circuits are designed in Quantum-dot Cellular Automata using majority gate and inverter. The majority gates function either as an AND or OR gate. NAND/NOR function is implemented by combing AND/OR gate with an inverter. A dedicated NAND/NOR gate will help to develop the QCA layout generation. Few structures are already existing in literature to implement NAND/NOR operation. All the existing designs require large area for implementation. In this paper, a novel NAND/NOR gate is proposed with the same cell count and area of a AND/OR gate. To validate the proposed gate, multiplexer and D-Flip Flop circuits are designed and implemented using the proposed gate. The simulation results show that the proposed gate consumes less area than the existing state-of-the-art designs. Defect analysis is performed for the proposed gate and compared with the existing designs. All the simulations and verifications are done using QCADesigner.
机译:量子点元胞自动机是一种新兴的后CMOS技术,具有高速,高封装密度和低功耗等有希望的功能。它导致了量子点元胞自动机中几种电路设计的出现。电路是在量子点自动机中使用多数门和逆变器设计的。多数门用作“与”或“或”门。 NAND / NOR功能是通过将AND / OR门与反相器相结合来实现的。专用的NAND / NOR门将有助于开发QCA布局。在文献中已经很少有结构可以实现NAND / NOR操作。现有的所有设计都需要大面积的实施空间。本文提出了一种新型的NAND / NOR门,其单元数和面积与AND / OR门相同。为了验证所提出的门,使用所提出的门设计并实现了多路复用器和D触发器电路。仿真结果表明,与现有的最新设计相比,拟议中的门消耗的面积更少。对建议的门进行了缺陷分析,并与现有设计进行了比较。所有模拟和验证均使用QCADesigner完成。

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