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Surface defect analysis of semiconductor materials and devices using nanoscopy techniques

机译:使用纳米技术对半导体材料和器件的表面缺陷进行分析

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Abstract: With manufacturing tolerances of microelectronic and electro-optical devices being improved to well below a micron, it is becoming increasingly difficult to check both the form of surface features and the presence of defects in a routine manner. These defects may be material or process related. In this paper we demonstrate the advantages of combining advanced optical methods with digital image processing, to form what we call 'Nanoscopy' techniques, for sub- micron surface measurement metrology. We distinguish between two imaging techniques, one for high resolution analysis of near flat surfaces and small features and the other for shape measurement of multi-micron high components. These are combined in the same instrument. The first, Phase Stepping Microscopy (PSM), is illustrated with examples of surface roughness measurement, epilayer defect analysis and feature identification after chemical etching. The second, Peak Fringe Stepping Microscopy (PFSM), is presented with examples of shape measurement of an optical laser guide and a Hetero-structure Bipolar Transistor (HBT).!5
机译:摘要:随着微电子和光电器件的制造公差提高到远低于微米,以常规方式检查表面特征的形式和缺陷的存在变得越来越困难。这些缺陷可能与材料或工艺有关。在本文中,我们演示了将先进的光学方法与数字图像处理相结合以形成亚微米表面测量计量学的“纳米检查”技术的优势。我们对两种成像技术进行了区分,一种是对近平坦表面和小特征的高分辨率分析,另一种是对微米级高组分的形状测量。这些组合在同一仪器中。首先介绍了相位步进显微镜(PSM),并提供了表面粗糙度测量,外延层缺陷分析和化学蚀刻后的特征识别的示例。第二个是峰值条纹步进显微镜(PFSM),其中包括光学激光导管和异质结构双极晶体管(HBT)的形状测量示例。!5

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